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IRF130
Data Sheet March 1999 File Number
1566.4
14A, 100V, 0.160 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17411.
Features
* 14A, 100V * rDS(ON) = 0.160 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
Ordering Information
PART NUMBER IRF130 PACKAGE TO-204AA BRAND IRF130
Symbol
D
NOTE: When ordering, use the entire part number.
G
S
Packaging
JEDEC TO-204AA
DRAIN (FLANGE)
SOURCE (PIN 2) GATE (PIN 1)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999
IRF130
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified IRF130 100 100 14 9.9 56 20 79 0.53 50 -55 to 175 300 260 UNITS V V A A A V W W/oC mJ oC
oC oC
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 150oC. TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) gts td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS LD Measured between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die Measured from the Source Lead, 6mm (0.25in) from the Flange and the Source Bonding Pad Modified MOSFET Symbol Showing the Internal Device Inductances
D LD G LS S
Electrical Specifications
PARAMETER
TEST CONDITIONS ID = 250A, VGS = 0V (Figure 10) VDS = VGS, ID = 250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 150oC VDS > ID(ON) x rDS(ON)MAX, VGS = 10V VGS = 20V ID = 8.3A, VGS = 10V (Figures 8, 9) VDS 50V, ID = 8.3A (Figure 12) VDD = 50V, ID 14A, RG = 12, RL = 3.5 (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature
MIN 100 2.0 14 4.6 -
TYP 0.12 6.9 18 5.5 11 600 300 100 5.0
MAX 4.0 25 250 100 0.16 30 75 40 45 26 -
UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH
Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain "Miller" Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance
VGS = 10V, ID = 14A, VDS = 0.8 x Rated BVDSS , Ig(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature
-
VDS = 25V, VGS = 0V, f = 1MHz (Figure 11)
-
Internal Source Inductance
LS
-
12.5
-
nH
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
RJC RJA Free Air Operation
-
-
1.9 30
oC/W oC/W
2
IRF130
Source to Drain Diode Specifications
PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode
G D
MIN -
TYP -
MAX 14 56
UNITS A A
S
Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES:
VSD trr QRR
TJ = 25oC, ISD = 14A, VGS = 0V (Figure 13) TJ = 25oC, ISD = 14A, dISD/dt = 100A/s TJ = 25oC, ISD = 5.5A, dISD/dt = 100A/s
55 0.26
120 0.58
2.5 250 1.3
V ns C
2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 380H, RG = 25, peak IAS = 14A. See Figures 15, 16.
Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100
Unless Otherwise Specified
15
ID, DRAIN CURRENT (A) 125 150 175
12
9
6
3
0 25
50
TC , CASE TEMPERATURE (oC)
75 100 125 TC, CASE TEMPERATURE (oC)
150
175
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
10 ZJC, THERMAL IMPEDANCE (oC)
1.0
0.5 0.2 0.1
0.1
0.05 0.02 0.01 SINGLE PULSE
PDM
t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 0.1 10-3 10-2 t1 , RECTANGULAR PULSE DURATION (s) 1 10
10-2 10-5
10-4
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
3
IRF130 Typical Performance Curves
103 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) ID, DRAIN CURRENT (A) 10s 100s 10 1ms 10ms 1 TJ = MAX RATED TC = 25oC DC
Unless Otherwise Specified (Continued)
25 8V 10V 80s PULSE TEST 15 6V VGS = 7V
ID, DRAIN CURRENT (A)
102
20
10 5V 5 4V
0.1 1 10
0 102 103 0 10 20 30 40 50 VDS, DRAIN TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
25 80s PULSE TEST 20 ID, DRAIN CURRENT (A) VGS = 8V VGS = 10V 15 VGS = 7V ID, DRAIN CURRENT (A)
102
VDS 50V 80s PULSE TEST
10
VGS = 6V
10 VGS = 5V 5 VGS = 4V 0 0.0 1.0 2.0 3.0 4.0 VDS, DRAIN TO SOURCE VOLTAGE (V) 5.0
1
TJ = 175oC TJ = 25oC
0.1
0
2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V)
10
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
1.5 DRAIN TO SOURCE ON RESISTANCE 80s PULSE TEST NORMALIZED DRAIN TO SOURCE ON RESISTANCE 1.2
3.0 ID = 14A VGS = 10V 2.4
0.9
1.8
0.6
VGS = 10V VGS = 20V
1.2
0.3
0.6
0.0 0 12 24 36 ID, DRAIN CURRENT (A) 48 60
0.0 -60
0
60
120
180
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE
4
IRF130 Typical Performance Curves
1.25 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A
Unless Otherwise Specified (Continued)
1500 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD
1.15 C, CAPACITANCE (pF)
1200
1.05
900
0.95
600
CISS COSS CRSS
0.85
300
0.75 -60
0
60
120
180
0
1
2
5
10
2
5
TJ, JUNCTION TEMPERATURE (oC)
102
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
10 gfs, TRANSCONDUCTANCE (S) VDS 50V 80s PULSE TEST ISD, DRAIN CURRENT (A) 8 TJ = 25oC 6 TJ = 175oC
103
102
10 TJ = 175oC 1 TJ = 25oC
4
2
0 0 5 10 15 ID, DRAIN CURRENT (A) 20 25
0.1 0
0.8 1.2 1.6 0.4 VSD, SOURCE TO DRAIN VOLTAGE (V)
2.0
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20 VGS, GATE TO SOURCE VOLTAGE (V)
16
ID = 14A FOR TEST CIRCUIT SEE FIGURE 18
VDS = 80V VDS = 50V VDS = 20V
12
8
4
0 0 6 12 18 24 30 Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5
IRF130 Test Circuits and Waveforms
VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD
+
-
0V
IAS 0.01
0 tAV
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
tON td(ON) tr RL VDS
+
tOFF td(OFF) tf 90%
90%
RG DUT
-
VDD 0
10% 90%
10%
VGS VGS 0 10%
50% PULSE WIDTH
50%
FIGURE 17. SWITCHING TIME TEST CIRCUIT
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
CURRENT REGULATOR
VDS (ISOLATED SUPPLY) VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS
12V BATTERY
0.2F
50k 0.3F
G
DUT 0
Ig(REF) 0 IG CURRENT SAMPLING RESISTOR
S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
6
IRF130
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7

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